Title :
Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM
Author :
Correas, V. ; Saigné, F. ; Sagnes, B. ; Wrobel, F. ; Boch, J. ; Gasiot, G. ; Roche, P.
Author_Institution :
STMicroelectronics Technol. R&D Technol. Line Manage., STMicroelectronics, Crolles, France
Abstract :
The PHISco simulation tool was known to be able to predict the SEU cross section for incident ions. This tool is improved in this work to also predict the MCU rate. Experimental and predicted results are shown to be in good agreement on a 90 nm bulk SRAM. The simulated SRAM structure includes the N-well, which is known to be a barrier to the charge carriers.
Keywords :
SRAM chips; PHISco simulation tool; SRAM; charge carriers; diffusion-collection model; multiple cell upset; size 90 nm; Charge carriers; Electrodes; Error correction codes; MOSFETs; Predictive models; Random access memory; Research and development; Research and development management; Single event upset; Technology management; Diffusion-collection model; N-well; PHISco; multiple cell upset; single event upset; source electrode;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2013622
