Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure

Author

Davidson, Jimmy L. ; Kang, Weng Poo ; Subramanian, Karthik ; Holmes-Siedle, Andrew G. ; Reed, Robert A. ; Galloway, Kenneth F.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

4

fYear

2009

Firstpage

2225

Lastpage

2229

Abstract

This paper reports the first neutron exposure on diamond electronic test structures for their possible application in very high fluence neutron conditions. The behavior of diamond lateral emission diodes after high neutron fluence of 4.4times10¹³ neutrons/cm² is evaluated. No noticeable changes in the device structure and electrical behavior, specifically resistivity, dilation and emission characteristics were observed.

Keywords

diamond; electrical resistivity; field emission; vacuum microelectronics; C; diamond vacuum electronic device; dilation; electrical behavior; electrical resistivity; emission characteristics; lateral emission diodes; neutron fluence exposure; vacuum field emission microelectronic devices; Diamond-like carbon; Electron sources; Microelectronics; Nanoscale devices; Neutrons; Power systems; Solid state circuits; Temperature; Vacuum systems; Vacuum technology; Carbon; dosimetry; lateral device; nanodiamond; neutron fluence; reactors; vacuum field emission microelectronics (VFEM);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2020603

Filename

5204587