Title :
The Path and Challenges to 90-nm Radiation-Hardened Technology
Author :
Haddad, Nadim F. ; Chan, Ernesto ; Doyle, Scott ; Kelly, Andrew T. ; Lawrence, Reed K. ; Lawson, David ; Patel, Dinu ; Ross, Jason
Author_Institution :
Electron. & Integrated Solutions, BAE Syst., Inc., Manassas, VA, USA
Abstract :
Radiation effects analysis on a commercial 90-nm CMOS process has been performed to evaluate hardness potential from a process and design perspective, and to identify techniques to promote radiation hardness enhancement towards achieving suitability for low power space applications.
Keywords :
CMOS integrated circuits; low-power electronics; nanoelectronics; radiation hardening (electronics); CMOS process; design perspective; power space application; radiation effect analysis; radiation-hardened technology; size 90 nm; Application specific integrated circuits; CMOS technology; Circuit testing; Ionizing radiation; Leakage current; MOSFETs; Performance evaluation; Radiation hardening; Random access memory; Space technology; Radiation hardening by design; radiation hardening by process; single event effects; single event latch-up; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2023521
