Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects

Author

Diez, S. ; Lozano, M. ; Pellegrini, G. ; Campabadal, F. ; Mandic, I. ; Knoll, D. ; Heinemann, B. ; Ullán, M.

Author_Institution

Inst. de Microelectron. de Barcelona IMB-CNM (CSIC), Barcelona, Spain

Volume

56

Issue

4

fYear

2009

Firstpage

1931

Lastpage

1936

Abstract

Proton irradiation results are shown here for three different SiGe:C HBT technologies from IHP Microelectronics. High damages are observed although the transistors remain usable for their application on the Super-LHC. Considerations on the ionization and displacement effects additivity are also presented in order to validate parameterized experiments. This study shows a reasonable agreement between proton irradiations and previous gamma and neutron irradiations.

Keywords

CMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; proton effects; semiconductor materials; CMOS technology; IHP microelectronics; SiGe:C; displacement effects; gamma irradiation; heterojunction bipolar transistor; ionization effects; neutron irradiation; proton radiation damage; super-LHC; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Ionization; Ionizing radiation; Microelectronics; Neutrons; Protons; Silicon germanium; Space technology; Displacement damage; SiGe; SiGe HBT; hardness assurance; ionization damage; proton radiation; radiation effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2018552

Filename

5204596