DocumentCode :
1299189
Title :
Effect of Airgap Deep Trench Isolation on the Gamma Radiation Behavior of a 0.13 
SiGe:C NPN HBT Technology
Author :
Put, Sofie ; Simoen, Eddy ; Van Huylenbroeck, Stefaan ; Claeys, Cor ; Van Uffelen, Marco ; Leroux, Paul
Author_Institution :
Electr. Eng. Dept., Katholieke Univ. Leuven, Leuven, Belgium
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
2198
Lastpage :
2204
Abstract :
The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13 mum SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.
Keywords :
Ge-Si alloys; carbon; gamma-ray effects; heterojunction bipolar transistors; isolation technology; NPN HBT technology; SiGe:C; airgap deep trench isolation; forward-mode operation; gamma radiation; reverse-mode operation; Capacitance; Degradation; Diffusion tensor imaging; Gamma rays; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Silicon germanium; Space technology; Thermal resistance; Deep trench isolation; SiGe Heterojunction Bipolar Transistor; high level gamma radiation; in-situ measurements;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2018277
Filename :
5204598
Link To Document :
