Investigation of Growth Conditions of CdTe Thick Films on Properties and Demands for X-Ray Detector Applications

Author

Sorgenfrei, Ralf ; Greiffenberg, Dominic ; Fiederle, Michael

Author_Institution

Freiburger Materialforschungszentrum (FMF), Albert-Ludwigs-Univ. Freiburg, Freiburg, Germany

Volume

56

Issue

4

fYear

2009

Firstpage

1768

Lastpage

1774

Abstract

CdTe thick films were prepared by vacuum deposition on amorphous substrates using MBE technique. The growth was performed at different temperatures to investigate the development of the growth rate, surface morphology, structure and optical properties. Properties of films deposited with a single CdTe source are compared with films grown with an additional Cd source. The growth experiments are discussed with regard to demands for X-ray detector applications.

Keywords

II-VI semiconductors; X-ray detection; cadmium compounds; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; surface morphology; vacuum deposition; CdTe; MBE technique; Si-SiO₂; Si-SiO₂ substrates; X-ray detector; amorphous substrates; growth conditions; optical properties; semiconductor thick films; surface morphology; vacuum deposition; Crystalline materials; Medical services; Molecular beam epitaxial growth; Optical films; Substrates; Surface morphology; Temperature; Thick films; X-ray detection; X-ray detectors; CdTe; direct growth; polycrystalline; thick films;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2018842

Filename

5204600