• DocumentCode
    1299234
  • Title

    Total Ionizing Dose Effects on Ge pMOSFETs With High- k Gate Stack: On/Off Current Ratio

  • Author

    Kulkarni, S.R. ; Schrimpf, R.D. ; Galloway, K.F. ; Arora, Rajun ; Claeys, Cor ; Simoen, Eddy

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    56
  • Issue
    4
  • fYear
    2009
  • Firstpage
    1926
  • Lastpage
    1930
  • Abstract
    The results of total ionizing dose irradiation on p-channel depletion mode MOSFETs fabricated on Ge-on-Si substrates with a TiN/TaN/HfO2 gate stack are reported. There is no significant change observed in gate leakage current, threshold voltage, or transconductance at the maximum total dose of 3 Mrad(SiO2), but there is a reduction in the on/off current ratio of the devices as the total dose increases. This reduction is due to an increase in drain-substrate junction leakage current, which is dominated by an increase in surface generation current.
  • Keywords
    MOSFET; dosimetry; leakage currents; radiation effects; Ge pMOSFET; Ge-Si; Ge-on-Si substrate; TiN-TaN-HfO2 gate stack; drain-substrate junction leakage current; high-k gate stack; ionizing dose irradiation effect; on-off current ratio; p-channel depletion mode; surface generation gate leakage current; transconductance; Charge carrier processes; Dielectric substrates; Hafnium oxide; Ionizing radiation; Leakage current; MOSFETs; Radiation effects; Threshold voltage; Tin; Transconductance; Germanium transistor; high-$k$ gate stack; junction leakage current; on/off current ratio; p-channel MOSFET; radiation effects; surface generation current; total ionizing dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2015664
  • Filename
    5204604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299234