DocumentCode :
1299285
Title :
0-56 GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines
Author :
Kimura, Shunji ; Imai, Yuki ; Yamaguchi, Satarou ; Onodera, K.
Author_Institution :
NTT Syst. Electron. Labs., Atsugi
Volume :
33
Issue :
1
fYear :
1997
fDate :
1/2/1997 12:00:00 AM
Firstpage :
93
Lastpage :
95
Abstract :
A GaAs MESFET distributed baseband amplifier IC that uses a gate-line-division technique and 3D transmission lines is described. The amplifier IC has S11<-13 dB and S21 of 11.7 dB in the 0-56 GHz band. This is the widest band of all reported GaAs MESFET baseband amplifier ICs
Keywords :
III-V semiconductors; MESFET integrated circuits; S-parameters; distributed amplifiers; field effect MIMIC; gallium arsenide; millimetre wave amplifiers; wideband amplifiers; 3D transmission lines; 56 GHz; GaAs; GaAs MESFET; distributed baseband amplifier IC; gate-line-division;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970017
Filename :
555109
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1299285
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