DocumentCode
1299347
Title
High frequency CV characteristics of plasma oxidised silicon carbide
Author
Smith, J.P. ; Taylor, Stephen ; Eccleston, W. ; Das, Manab Kr ; Cooper, J.A. ; Melloch, M.R.
Volume
33
Issue
1
fYear
1997
fDate
1/2/1997 12:00:00 AM
Firstpage
97
Lastpage
98
Abstract
Oxides have successfully been grown on 4H-silicon carbide substrates by low temperature (<300°C) plasma oxidation. HFCV measurements on MOS capacitors show the devices to be stable, and capable of accumulation, depletion and inversion. The devices have a D it of 2×1011 eV-1 cm-2, a Q1 of 1.05×1012 cm-2 and show negligible slow trapping effects
Keywords
MOS capacitors; accumulation layers; characteristics measurement; inversion layers; oxidation; semiconductor materials; silicon compounds; HFCV measurements; MOS capacitors; SiC; accumulation; depletion; high frequency CV characteristics; inversion; plasma oxidation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970055
Filename
555111
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