Title :
Gain of high-intensity pulse-pumped GaP-AlGaP waveguide Raman amplifier
Author :
Saito, T. ; Suto, K. ; Kimura, T. ; Nishizawa, J.
Author_Institution :
Fac. of Eng., Tohoku Univ., Sendai, Japan
fDate :
10/1/1999 12:00:00 AM
Abstract :
The gain measurement of a semiconductor Raman amplifier with a GaP-AlGaP waveguide structure pumped by a high-intensity pulse source has been measured for use as a basis for the time gate amplification of light. A gain of 10 dB has been obtained for a 5 mm long waveguide with a back reflector. The gain measurement has also been performed for a waveguide which has both faces antireflection coated. From this measurement, it is confirmed that the gain is principally from backward scattering rather than from forward scattering. It is shown that the dominance of backward scattering limits the minimum gate time for the time gate amplification of light
Keywords :
III-V semiconductors; Raman lasers; aluminium compounds; gain measurement; gallium compounds; laser variables measurement; light scattering; optical pumping; semiconductor optical amplifiers; waveguide lasers; 10 dB; 5 mm; GaP-AlGaP; GaP-AlGaP waveguide structure; antireflection coated; back reflector; backward scattering; gain measurement; high-intensity pulse source; high-intensity pulse-pumped GaP-AlGaP waveguide Raman amplifier gain; laser pumping; minimum gate time; semiconductor Raman amplifier; time gate light amplification;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19990845
