Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES

Author

Kubát, Jan ; Elhadidy, Hassan ; Franc, Jan ; Grill, Roman ; Belas, Eduard ; Höschl, Pavel ; Praus, Petr

Author_Institution

Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic

Volume

56

Issue

4

fYear

2009

Firstpage

1706

Lastpage

1711

Abstract

The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics and thermoelectric effect spectroscopy measurements (77-400 K). A simulation of experimental data was performed by a numerical solution of drift-diffusion and Poisson equations using a model with two deep levels. A comparison of crystals doped with shallow and deep dopants is given.

Keywords

II-VI semiconductors; Poisson equation; cadmium compounds; deep levels; diffusion; electrical resistivity; photoconductivity; thermoelectricity; CdTe; Poisson equations; TEES; deep dopants; deep levels; drift-diffusion; high-resistivity material; near-midgap level concentrations; numerical solution; photoconductivity; semiinsulating material; temperature 293 K to 298 K; temperature 77 K to 400 K; thermoelectric effect spectroscopy measurements; Crystals; Electron traps; Performance evaluation; Photoconductivity; Semiconductor process modeling; Space charge; Spectroscopy; Steady-state; Thermoelectricity; Tin; Deep levels; high-resistivity; photoelectric measurements;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2022162

Filename

5204624