Hot electron effects on Al0.25Ga0.75As/GaAs power HFET´s under off-state and on-state electrical stress conditions

This work shows a detailed comparison of the degradation modes caused by off-state and on-state room temperature electrical stress on the DC characteristics of power AlGaAs/GaAs heterostructure field effect transistors (HFET´s) for X- and Ku-band applications. The devices are stressed under DC bias conditions that result in electron heating and impact ionization in the gate-drain region. Incremental stress experiments carried out at gate-drain reverse currents up to 3.3 mA/mm (for a total of more than 700 h) show a remarkably larger degradation for the off state stress, due to more pronounced electron heating at any fixed value of gate reverse current. This represents an important piece of information for the reliability engineer when it comes to designing the accelerated stress experiments for hot electron robustness evaluation. The degradation modes observed, all of a permanent nature, include threshold voltage and drain resistance increase and drain current and transconductance reduction