• DocumentCode
    1299396
  • Title

    Measurement of high-field electron transport in silicon carbide

  • Author

    Khan, Imran A. ; Cooper, James A., Jr.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    47
  • Issue
    2
  • fYear
    2000
  • fDate
    2/1/2000 12:00:00 AM
  • Firstpage
    269
  • Lastpage
    273
  • Abstract
    We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field. The dependence of the low field mobility and saturated drift velocity on temperature are also reported. The saturated drift velocities at room temperature are approximately 1.9×107 cm/s in 6H-SiC and 2.2×107 cm/s in 4H-SiC
  • Keywords
    electron mobility; high field effects; silicon compounds; wide band gap semiconductors; 4H-SiC; 6H-SiC; SiC; high-field electron transport; low-field mobility; saturated drift velocity; silicon carbide; temperature dependence; Aluminum; Annealing; Argon; Electron mobility; Etching; Nitrogen; Ohmic contacts; Silicon carbide; Temperature; Velocity measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.822266
  • Filename
    822266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299396