DocumentCode :
1299421
Title :
ELDRS in Bipolar Linear Circuits: A Review
Author :
Pease, Ronald L. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M.
Author_Institution :
RLP Res., Los Lunas, NM, USA
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1894
Lastpage :
1908
Abstract :
Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar linear transistors was first identified in bipolar microcircuit transistors in 1991 and demonstrated in bipolar linear circuits in 1994. Since then it has been a major topic of research, characterization and analysis. Data compendia of low dose rate enhancement factors were presented in 1996, 2001 and 2008, identifying 30 unique widely used circuit types as susceptible to ELDRS. Early work on ELDRS was directed toward identifying mechanisms, characterizing circuits and developing hardness assurance methods, concentrating on accelerated testing techniques. More recently the research on ELDRS has focused on the effects of pre-irradiation elevated temperature stress (PETS), final passivation layers and molecular hydrogen in the package. This review paper provides an update on ELDRS in bipolar linear circuits, including the most recent results of mechanisms research, and the effects of post metallization processing on the total ionizing dose response.
Keywords :
bipolar integrated circuits; bipolar transistor circuits; dosimetry; integrated circuit metallisation; integrated circuit testing; passivation; radiation hardening (electronics); accelerated testing techniques; bipolar linear circuits; bipolar linear transistors; bipolar microcircuit transistors; enhanced low dose rate sensitivity; hardness assurance methods; molecular hydrogen; passivation layers; post metallization processing; preirradiation elevated temperature stress; total ionizing dose response; Bipolar transistor circuits; Hydrogen; Life estimation; Linear circuits; Metallization; Packaging; Passivation; Positron emission tomography; Stress; Temperature; Accelerated testing; bipolar linear circuits; dose rate effects; enhanced low dose rate sensitivity; hardness assurance; low dose rate enhancement factor; total dose;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2011485
Filename :
5204634
Link To Document :
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