Title :
Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM
Author :
Autran, L. ; Roche, P. ; Sauze, S. ; Gasiot, G. ; Munteanu, D. ; Loaiza, P. ; Zampaolo, M. ; Borel, J.
Author_Institution :
CNRS, Aix-Marseille Univ., Marseille, France
Abstract :
We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology.
Keywords :
CMOS integrated circuits; SRAM chips; CMOS; SRAM memories; accelerated tests; alpha-particle single-event rate; neutron single-event rate; real-time SER characterization; size 130 nm; size 65 nm; CMOS technology; Circuit testing; Contamination; Impurities; Integrated circuit technology; Microelectronics; Nanostructured materials; Neutrons; Pollution measurement; Random access memory; Accelerated tests; SER simulation; alpha contamination; atmospheric neutrons; neutron-induced SER; real-time testing; single-Event Rate (SER); static memory; terrestrial radiation environment;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2012426
