Hydrogenated amorphous silicon thin film transistor fabricated on plasma treated silicon nitride

Author

Lim, Byung Cheon ; Choi, Young Jin ; Choi, Jong Hyun ; Jang, Jin

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

367

Lastpage

371

Abstract

We have demonstrated that the performance of the inverted staggered, hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is improved by a He, H₂, NH₃ or N₂ plasma treatment for a short time on the surface of silicon nitride (SiN _x) before a-Si:H deposition. With increasing plasma exposure time, the field-effect mobility increase at first and then decrease, but the threshold voltage changes little. The a-Si:H TFT with a 6-min N₂ plasma treatment on SiN_x exhibited a field effect mobility of 1.37 cm²/Vs, a threshold voltage of 4.2 V and a subthreshold slope of 0.34 V/dec. It is found that surface roughness of SiN_x is decreased and N concentration in the SiN _x at the surface region decreases using the plasma treatment

Keywords

MISFET; amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; plasma CVD; plasma materials processing; silicon; silicon compounds; surface topography; surface treatment; thin film transistors; 4.2 V; 6 min; H₂; H₂ plasma treatment; He; He plasma treatment; N concentration; N₂; N₂ plasma treatment; NH₃; NH₃ plasma treatment; Si:H-SiN; SiN; SiN_x surface roughness; a-Si:H TFT; a-Si:H deposition; field-effect mobility; hydrogenated amorphous Si TFT; inverted staggered TFT; plasma exposure time; plasma treated SiN; subthreshold slope; surface region; thin film transistor; threshold voltage; Amorphous silicon; Helium; Hydrogen; Plasmas; Rough surfaces; Silicon compounds; Surface roughness; Surface treatment; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822282

Filename

822282