Title :
Hydrogenated amorphous silicon thin film transistor fabricated on plasma treated silicon nitride
Author :
Lim, Byung Cheon ; Choi, Young Jin ; Choi, Jong Hyun ; Jang, Jin
Author_Institution :
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
fDate :
2/1/2000 12:00:00 AM
Abstract :
We have demonstrated that the performance of the inverted staggered, hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is improved by a He, H2, NH3 or N2 plasma treatment for a short time on the surface of silicon nitride (SiN x) before a-Si:H deposition. With increasing plasma exposure time, the field-effect mobility increase at first and then decrease, but the threshold voltage changes little. The a-Si:H TFT with a 6-min N2 plasma treatment on SiNx exhibited a field effect mobility of 1.37 cm2/Vs, a threshold voltage of 4.2 V and a subthreshold slope of 0.34 V/dec. It is found that surface roughness of SiNx is decreased and N concentration in the SiN x at the surface region decreases using the plasma treatment
Keywords :
MISFET; amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; plasma CVD; plasma materials processing; silicon; silicon compounds; surface topography; surface treatment; thin film transistors; 4.2 V; 6 min; H2; H2 plasma treatment; He; He plasma treatment; N concentration; N2; N2 plasma treatment; NH3; NH3 plasma treatment; Si:H-SiN; SiN; SiNx surface roughness; a-Si:H TFT; a-Si:H deposition; field-effect mobility; hydrogenated amorphous Si TFT; inverted staggered TFT; plasma exposure time; plasma treated SiN; subthreshold slope; surface region; thin film transistor; threshold voltage; Amorphous silicon; Helium; Hydrogen; Plasmas; Rough surfaces; Silicon compounds; Surface roughness; Surface treatment; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
