Title :
Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices
Author :
Wordelman, Carl J. ; Ravaioli, Umberto
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fDate :
2/1/2000 12:00:00 AM
Abstract :
A particle-particle-particle-mesh (P3M) algorithm is integrated with the ensemble Monte Carlo (EMC) method for the treatment of carrier-impurity (c-i) and carrier-carrier (c-c) effects in semiconductor device simulation. Ionized impurities and charge carriers are treated granularly as opposed to the normal continuum methods and c-i and c-c interactions are calculated in three dimensions. The combined P3M-EMC method follows the approach of Hockney (1981), but is modified to treat nonuniform rectilinear meshes with arbitrary boundary conditions. Bulk mobility results are obtained for a three-dimensional (3-D) resistor and are compared with previously reported experimental and numerical results
Keywords :
Monte Carlo methods; carrier mobility; collision processes; electronic engineering computing; semiconductor device models; 3D resistor; arbitrary boundary conditions; bulk mobility results; carrier-carrier effects; carrier-impurity effects; charge carriers; ensemble Monte Carlo method; granular treatment; ionized impurities; nonuniform rectilinear meshes; particle-particle-particle-mesh algorithm; semiconductor device simulation; three-dimensional resistor; ultra-small semiconductor devices; Boundary conditions; Charge carriers; Electromagnetic compatibility; MOSFET circuits; Monte Carlo methods; Particle collisions; Particle scattering; Resistors; Semiconductor devices; Semiconductor impurities;
Journal_Title :
Electron Devices, IEEE Transactions on
