Title :
Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models
Author :
Cao, Xiaochong ; McMacken, J. ; Stiles, K. ; Layman, P. ; Liou, Juin J. ; Oritz-Conde, A. ; Moinian, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
fDate :
2/1/2000 12:00:00 AM
Abstract :
A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper focuses on the comparison of the VBIC and Gummel-Poon models under the DC operations. The extraction and optimization procedure coded in S+ statistical language and required for VBIC simulation is also developed and presented
Keywords :
bipolar transistors; electronic engineering computing; equivalent circuits; optimisation; semiconductor device models; DC operations; Gummel-Poon model; S+ statistical language; VBIC model; VBIC simulation; bipolar transistor models; extraction procedure; industry standard transistor model; optimization procedure; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Circuit simulation; Computer industry; Equivalent circuits; Helium; Integrated circuit modeling; Standards development; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
