Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides

Author

Yang, Nian ; Henson, W. Kirklen ; Hauser, John R. ; Wortman, Jimmie J.

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

440

Lastpage

447

Abstract

The effects of remote charge scattering on the electron mobility of n-MOSFETs with ultrathin gate oxides from 1.5 nm to 3.2 nm have been estimated. By calculating the scattering rate of the two-dimensional (2-D) electron gas at the Si/silicon dioxide interface due to the ionized doping impurities at the poly-Si/silicon dioxide interface, the remote charge scattering mobility has been calculated. Electron mobility measured from the n-MOSFETs with ultrathin gate oxides has been used to extract several known mobility components. These mobility components have been compared to the calculated remote charge scattering mobility. From these comparisons, it is clear that the overall electron mobility is not severely degraded by remote charge scattering for the oxide thickness studied

Keywords

MOSFET; dielectric thin films; electron mobility; inversion layers; semiconductor-insulator boundaries; two-dimensional electron gas; 1.5 to 3.2 nm; 2D electron gas; 2DEG; Si-SiO₂; Si/silicon dioxide interface; electron mobility; ionized doping impurities; mobility components; n-MOSFET; polysilicon/silicon dioxide interface; remote charge scattering; scattering rate; two-dimensional electron gas; ultrathin gate oxides; Degradation; Doping; Electron mobility; Impurities; MOS devices; MOSFET circuits; Particle scattering; Quantum mechanics; Silicon compounds; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822292

Filename

822292