Title :
High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric
Author :
Wang, Xiewen W. ; Luo, Z.J. ; Ma, Tso-Ping
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
2/1/2000 12:00:00 AM
Abstract :
This paper reports the high temperature (up to 450°C) characteristics of 6H-SiC MIS capacitors made with SiO2/SiN/SiO2 (ONO) stack gate dielectric deposited by the jet vapor deposition (JVD) process. This ONO stack gate dielectric provides: (1) high immunity to instability caused by mobile ions, (2) orders of magnitude lower gate leakage current than its thermal oxide counterpart, (3) the highest dielectric breakdown strength ever reported for SiC MIS structures at elevated temperatures (i.e., greater than 12 MV/cm at 450°C), (4) relatively symmetric p-and n-type C-V and current-voltage (I-V) characteristics, due to low densities of dielectric charge as well as interface traps in both types of samples, and (5) over ten years of projected lifetime for both types operating at an electric field of 3 MV/cm at 350°C. The key factors contributing to such success are briefly discussed
Keywords :
MIS capacitors; dielectric thin films; electric breakdown; electric strength; high-temperature electronics; interface states; leakage currents; semiconductor device reliability; semiconductor-insulator boundaries; silicon compounds; stability; wide band gap semiconductors; 350 to 450 C; 6H-SiC; JVD process; ONO stack gate dielectric; SiC; SiO2-SiN-SiO2; SiO2/SiN/SiO2 gate dielectric; dielectric breakdown strength; dielectric charge; elevated temperatures; gate leakage current; high-quality SiC MIS capacitors; high-temperature characteristics; interface traps; jet vapor deposition process; symmetric C-V characteristic; symmetric I-V characteristics; Capacitors; Chemical vapor deposition; Dielectric devices; Dielectric substrates; Leakage current; MOS devices; Oxidation; Silicon carbide; Silicon compounds; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
