DocumentCode :
1299652
Title :
Resonant interband tunnelling diode with high peak current density
Author :
Kitabayashi, H. ; Waho, T. ; Yamamoto, Manabu
Author_Institution :
NTT Syst. Electron. Labs., Atsugi
Volume :
33
Issue :
1
fYear :
1997
fDate :
1/2/1997 12:00:00 AM
Firstpage :
102
Lastpage :
104
Abstract :
Peak current densities (Ip) as high as 1.3×105 A/cm2 with peak-to-valley current ratios of 3.7 are reported for InAs/AlSb/GaSb/AlSb/InAs double-barrier resonant interband tunnelling diodes. The fact that 1-monolayer-thick AlSb barriers exist between the InAs and GaSb layers is essential in obtaining such a high value of Ip
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; resonant tunnelling diodes; InAs-AlSb-GaSb-AlSb-InAs; double-barrier resonant interband tunnelling diode; negative resistance; peak current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970019
Filename :
555115
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1299652
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