Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs

The hysteresis effect on the output characteristics, which originates from the floating-body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, at different temperatures between 25 °C and 125 °C. For a better understanding of the hysteresis characteristics, the authors developed I_D hysteresis which is defined as the difference between I_D versus V_D forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in Id hysteresis. The experimental results show that I_D hysteresis declined as the operating temperature increases. Based on the measurement, we have demonstrated the temperature dependence of hysteresis effect in PD SOI MOSFETs.