Experimental Methods for Defect Introduction Rates Determination in Multijunction Solar Cells

Author

Gauffier, A. ; David, J.P. ; Gilard, O. ; Nuns, T. ; Inguimbert, C. ; Balocchi, A.

Author_Institution

ONERA-DESP, Toulouse, France

Volume

56

Issue

4

fYear

2009

Firstpage

2237

Lastpage

2241

Abstract

We present and compare different experimental methods used to determine defect introduction rates in materials constituting trijunction solar cells. Most of the experimental methods correlates together and with an analytical modeling. Defect introduction rates values in GaInP and GaAs are presented over a wide range of NIELs; this result seems intrinsic to these two materials.

Keywords

III-V semiconductors; deep level transient spectroscopy; electroluminescence; gallium arsenide; gallium compounds; photoluminescence; solar cells; GaAs; GaInP; GalnP; analytical modeling; deep level transient spectroscopy; defect introduction rates; electroluminescence; multijunction solar cells; time-resolved photoluminescence; trijunction solar cells; Degradation; Electroluminescence; Electrons; Gallium arsenide; Laser theory; Optical pulses; Photoluminescence; Photovoltaic cells; Protons; Spectroscopy; Deep level transient spectroscopy (DLTS); Multijunction solar cells; defect introduction rate; electroluminescence; time-resolved photoluminescence (TRPL);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2013623

Filename

5204675