• DocumentCode
    1299693
  • Title

    Si memory device operated with a small number of electrons by using a single-electron-transistor detector

  • Author

    Takahashi, Y. ; Fujiwara, A. ; Yamazaki, K. ; Namatsu, H. ; Kurihara, K. ; Murase, K.

  • Author_Institution
    NTT Basic Res. Labs., Kanagawa, Japan
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/8/1998 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation
  • Keywords
    EPROM; MOS memory circuits; MOSFET; elemental semiconductors; large scale integration; silicon; single electron transistors; EPROM; MOSFET gateway; Si; high-speed operation; memory device; memory island; single-electron-transistor detector; ultra-low-power devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980087
  • Filename
    654509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299693