Title :
Si memory device operated with a small number of electrons by using a single-electron-transistor detector
Author :
Takahashi, Y. ; Fujiwara, A. ; Yamazaki, K. ; Namatsu, H. ; Kurihara, K. ; Murase, K.
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
fDate :
1/8/1998 12:00:00 AM
Abstract :
A novel Si memory device is proposed, and its fundamental characteristics are demonstrated. The device uses a MOSFET as a gateway for electrons transported to and from the memory island. The stored electrons are detected by a highly sensitive single-electron transistor. The device features ultra-low-power and high-speed operation
Keywords :
EPROM; MOS memory circuits; MOSFET; elemental semiconductors; large scale integration; silicon; single electron transistors; EPROM; MOSFET gateway; Si; high-speed operation; memory device; memory island; single-electron-transistor detector; ultra-low-power devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980087
