Abstract :
Charge generation in CVD SiO2 on Si substrate, subjected to 253.7 nm ultraviolet irradiation, is observed from variation in the effective minority carrier lifetime in Si. The carrier lifetime exhibits a minimum, a maximum, and a second minimum, before saturation. This is consistent with changes in the silicon surface potential which controls surface recombination, as injected electrons are captured by generated SiO2 traps
Keywords :
CVD coatings; carrier lifetime; electron traps; insulating thin films; minority carriers; radiation effects; silicon compounds; surface potential; surface recombination; 253.7 nm; CVD SiO2; Si substrate; SiO2; charge generation; electron injection; minority carrier lifetime; surface potential; surface recombination; trap generation; ultraviolet irradiation;
