DocumentCode :
1299746
Title :
Study on Instability Phenomena in CdTe Diode-Like Detectors
Author :
Farella, I. ; Montagna, G. ; Mancini, A.M. ; Cola, A.
Author_Institution :
Unit of Lecce, CNR/IMM, Lecce, Italy
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1736
Lastpage :
1742
Abstract :
Diode-like In/CdTe/Pt detectors are widely used thanks to their excellent spectroscopic performance. However, when operated at room temperature they are not stable, and their performance degrades with time. The aim of this paper is to investigate in detail the physical mechanisms underlying this effect, by studying the evolution of the space charge inside the detector. Our approach makes use of the Pockels effect, by looking at the evolution of the electric field distribution inside the detector at different temperatures. The results show that a negative space charge accumulation occurs at the anode and that the process is thermally activated. The effect is attributed to a midgap acceptor which, under reverse bias, increases its ionization because of hole detrapping. Moreover, we compare the results with those obtained on stable detectors realized from nominally same crystals but having ldquostandard,rdquo i.e., not rectifying contacts. Consistently with the detection performance stability of this kind of detectors, the electric field is relatively stable. Furthermore, it decreases from cathode and it shows peculiar features which will be discussed in conjunction with charge transport properties.
Keywords :
Pockels effect; semiconductor counters; space charge; Pockels effect; charge transport properties; diode-like In-CdTe-Pt detectors; electric field distribution; instability phenomena; negative space charge accumulation; temperature 293 K to 298 K; Anodes; Crystals; Degradation; Detectors; Diodes; Ionization; Space charge; Spectroscopy; Stability; Temperature distribution; CdTe; Pockels effect; Schottky barrier; X-ray detectors; polarization; space charge;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2017020
Filename :
5204686
Link To Document :
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