Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

Author

Esqueda, I.S. ; Barnaby, H.J. ; McLain, Michael L. ; Adell, P.C. ; Mamouni, F.E. ; Dixit, S.K. ; Schrimpf, R.D. ; Xiong, W.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

56

Issue

4

fYear

2009

Firstpage

2247

Lastpage

2250

Abstract

A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on the electrical characteristics. Closed-form expressions for the front and back-gate surface potential incorporate these effects, thereby enabling accurate modeling of the degraded current voltage characteristics that result from ionizing radiation exposure.

Keywords

MOSFET; radiation effects; semiconductor device models; silicon-on-insulator; surface potential; band-to-band tunneling; buried oxide; continuous analytical model; current-voltage characteristics; electrical characteristics; fully-depleted SOI n-channel MOSFETs; ionizing radiation effects; radiation-induced degradation; surface potential; Analytical models; Closed-form solution; Current-voltage characteristics; Degradation; Electric variables; Ionizing radiation; MOSFETs; Radiation effects; Silicon on insulator technology; Tunneling; Band-to-band tunneling (BBT); fully-depleted silicon on Insulator (FDSOI); metal oxide semiconductor field effect transistor (MOSFET); total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2012709

Filename

5204687