Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

Author

Griffoni, Alessio ; Silvestri, Marco ; Gerardin, Simone ; Meneghesso, Gaudenzio ; Paccagnella, Alessandro ; Kaczer, Ben ; De Potter de ten Broeck, Muriel ; Verbeeck, Rita ; Nackaerts, Axel

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy

Volume

56

Issue

4

fYear

2009

Firstpage

2205

Lastpage

2212

Abstract

We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.

Keywords

CMOS integrated circuits; MOSFET; X-ray effects; integrated circuit interconnections; secondary electron emission; LDD spacers; X-ray irradiation; deep-submicron CMOS; deep-submicron MOSFET; device proximity; dose-enhancement effects; interconnects; secondary electron emission; transistor lateral isolation; CMOS technology; Electron beams; Electron emission; Integrated circuit interconnections; MOSFETs; Neutrons; Particle beams; Performance evaluation; Testing; X-rays; CMOS; dose enhancement; radiation hardness; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2012860

Filename

5204691