• DocumentCode
    1299804
  • Title

    High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs

  • Author

    Matsuzaki, Hideaki ; Arai, Kenta ; Maezawa, K. ; Osaka, J. ; Yamamoto, Manabu ; Otsuji, Taiichi

  • Author_Institution
    NTT Syst. Electron. Labs., Kanagawa
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/8/1998 12:00:00 AM
  • Firstpage
    70
  • Lastpage
    71
  • Abstract
    A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency ftoggle of a static binary frequency divider close to the cutoff frequency ft of the used 0.7 μm-gate HEMTs. ftoggle and ft are 34 and 38 GHz, respectively. This technology is promising for use in high-speed logic circuits
  • Keywords
    HEMT integrated circuits; field effect logic circuits; frequency dividers; resonant tunnelling diodes; 0.7 micron; 34 GHz; 38 GHz; HEMTs; RTD; cutoff frequency; high-speed logic circuits; high-speed operation; resonant tunnelling diodes; static binary frequency divider; toggle frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980103
  • Filename
    654527