DocumentCode
1299804
Title
High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs
Author
Matsuzaki, Hideaki ; Arai, Kenta ; Maezawa, K. ; Osaka, J. ; Yamamoto, Manabu ; Otsuji, Taiichi
Author_Institution
NTT Syst. Electron. Labs., Kanagawa
Volume
34
Issue
1
fYear
1998
fDate
1/8/1998 12:00:00 AM
Firstpage
70
Lastpage
71
Abstract
A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency ftoggle of a static binary frequency divider close to the cutoff frequency ft of the used 0.7 μm-gate HEMTs. ftoggle and ft are 34 and 38 GHz, respectively. This technology is promising for use in high-speed logic circuits
Keywords
HEMT integrated circuits; field effect logic circuits; frequency dividers; resonant tunnelling diodes; 0.7 micron; 34 GHz; 38 GHz; HEMTs; RTD; cutoff frequency; high-speed logic circuits; high-speed operation; resonant tunnelling diodes; static binary frequency divider; toggle frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980103
Filename
654527
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