DocumentCode :
1299810
Title :
Low temperature VUV-assisted oxidation of Ge
Author :
Craciun, V. ; Hutton, B. ; Williams, D.E. ; Boyd, I.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume :
34
Issue :
1
fYear :
1998
fDate :
1/8/1998 12:00:00 AM
Firstpage :
71
Lastpage :
72
Abstract :
Direct photo-oxidation of germanium at temperatures <400°C using vacuum ultraviolet (VUV) radiation from an excimer lamp has been investigated. The oxidation rate of 0.1 nm/min is significantly faster than conventional thermal oxidation. Single wavelength ellipsometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy measurements indicate that the grown layers are stoichiometric GeO2
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; elemental semiconductors; ellipsometry; germanium; infrared spectra; oxidation; 400 C; Fourier transform infrared spectroscopy; Ge oxidation; Ge-GeO2; X-ray photoelectron spectroscopy; direct photo-oxidation; excimer lamp; low temperature VUV-assisted oxidation; single wavelength ellipsometry; stoichiometric GeO2 layers; vacuum ultraviolet radiation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980072
Filename :
654528
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1299810
بازگشت