Title :
Microelectromechanical tuneable filters with 0.47 nm linewidth and 70 nm tuning range
Author :
Tayebati, P. ; Wang, P. ; Vakhshoori, D. ; Sacks, R.N.
Author_Institution :
CoreTek Inc., Burlington, MA, USA
fDate :
1/8/1998 12:00:00 AM
Abstract :
Microelectromechanical filters were fabricated by selective oxidation of AlAs layers in a GaAlAs/AlAs Fabry-Perot structure and by removing the GaAs sacrificial layer. The device exhibits a 3 dB linewidth of 0.47 nm, a tuning range of more than 70 nm and <1 dB insertion loss. The structure exhibits frequency response of 500 kHz at a 3 dB cutoff point
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; electro-optical filters; gallium arsenide; micromechanical devices; oxidation; tuning; 1 dB; 500 kHz; AlAs layer; GaAlAs-GaAs; GaAlAs/AlAs Fabry-Perot structure; GaAs sacrificial layer; cutoff point; frequency response; insertion loss; linewidth; microelectromechanical tuneable filter; selective oxidation; tuning range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980033
