• DocumentCode
    1299872
  • Title

    Effect of element width on above-threshold behaviour of antiguided diode laser arrays

  • Author

    Bhattacharya, A. ; Botez, D. ; Nabiev, R.F.

  • Author_Institution
    Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/8/1998 12:00:00 AM
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    The authors analyse the effect of element width on the modal behaviour of resonant antiguided diode laser arrays at high drive levels above threshold. Intra-element gain spatial hole burning causes modes adjacent to the resonant (in-phase) mode to eventually reach threshold, the onset of which is hastened as element widths get larger than the carrier diffusion length; this is in excellent agreement with experimental observations
  • Keywords
    laser modes; laser stability; optical hole burning; semiconductor laser arrays; above-threshold behaviour; antiguided diode laser arrays; carrier diffusion length; element width; high drive levels; intra-element gain spatial hole burning; modal behaviour; resonant antiguided LD arrays;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980083
  • Filename
    654537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299872