• DocumentCode
    1299874
  • Title

    Multi-Species Diffusion in CdTe

  • Author

    Grill, R. ; Belas, E. ; Bugár, M. ; Höschl, P. ; Nahlovskyy, B. ; Fochuk, P. ; Panchuk, O. ; Bolotnikov, A.E. ; James, Ralph B.

  • Author_Institution
    Inst. of Phys., Charles Univ., Prague, Czech Republic
  • Volume
    56
  • Issue
    4
  • fYear
    2009
  • Firstpage
    1763
  • Lastpage
    1767
  • Abstract
    We studied theoretically chemical self-diffusion and the diffusion of extrinsic atoms in CdTe. We compiled a general model describing the multi-species diffusion of arbitrary amounts of elements in a form optimized for numerical calculations and applied it to a model system of CdTe doped with slow- or fast-diffusing elements. The diffusion of slowly diffusing atoms was analyzed and compared with experimental findings. We uncovered possible drawbacks in the experimental data that might affect the ensuing analysis by researchers, so generating incorrect conclusions. We suggest a method of purifying CdTe from fast-diffusing impurities based on a proper annealing/etching process.
  • Keywords
    II-VI semiconductors; annealing; cadmium compounds; doping profiles; etching; gamma-ray detection; impurities; self-diffusion; semiconductor counters; CdTe:Cu; annealing process; chemical self-diffusion; doping; etching process; gamma-ray detectors; impurities; numerical calculation; Annealing; Chemical elements; Crystallization; Etching; Helium; Impurities; Physics; Purification; Semiconductor process modeling; Tellurium; CdTe; chemical diffusion; impurity diffusion; purification;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2022163
  • Filename
    5204707