DocumentCode
1299874
Title
Multi-Species Diffusion in CdTe
Author
Grill, R. ; Belas, E. ; Bugár, M. ; Höschl, P. ; Nahlovskyy, B. ; Fochuk, P. ; Panchuk, O. ; Bolotnikov, A.E. ; James, Ralph B.
Author_Institution
Inst. of Phys., Charles Univ., Prague, Czech Republic
Volume
56
Issue
4
fYear
2009
Firstpage
1763
Lastpage
1767
Abstract
We studied theoretically chemical self-diffusion and the diffusion of extrinsic atoms in CdTe. We compiled a general model describing the multi-species diffusion of arbitrary amounts of elements in a form optimized for numerical calculations and applied it to a model system of CdTe doped with slow- or fast-diffusing elements. The diffusion of slowly diffusing atoms was analyzed and compared with experimental findings. We uncovered possible drawbacks in the experimental data that might affect the ensuing analysis by researchers, so generating incorrect conclusions. We suggest a method of purifying CdTe from fast-diffusing impurities based on a proper annealing/etching process.
Keywords
II-VI semiconductors; annealing; cadmium compounds; doping profiles; etching; gamma-ray detection; impurities; self-diffusion; semiconductor counters; CdTe:Cu; annealing process; chemical self-diffusion; doping; etching process; gamma-ray detectors; impurities; numerical calculation; Annealing; Chemical elements; Crystallization; Etching; Helium; Impurities; Physics; Purification; Semiconductor process modeling; Tellurium; CdTe; chemical diffusion; impurity diffusion; purification;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2009.2022163
Filename
5204707
Link To Document