DocumentCode :
1299874
Title :
Multi-Species Diffusion in CdTe
Author :
Grill, R. ; Belas, E. ; Bugár, M. ; Höschl, P. ; Nahlovskyy, B. ; Fochuk, P. ; Panchuk, O. ; Bolotnikov, A.E. ; James, Ralph B.
Author_Institution :
Inst. of Phys., Charles Univ., Prague, Czech Republic
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1763
Lastpage :
1767
Abstract :
We studied theoretically chemical self-diffusion and the diffusion of extrinsic atoms in CdTe. We compiled a general model describing the multi-species diffusion of arbitrary amounts of elements in a form optimized for numerical calculations and applied it to a model system of CdTe doped with slow- or fast-diffusing elements. The diffusion of slowly diffusing atoms was analyzed and compared with experimental findings. We uncovered possible drawbacks in the experimental data that might affect the ensuing analysis by researchers, so generating incorrect conclusions. We suggest a method of purifying CdTe from fast-diffusing impurities based on a proper annealing/etching process.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; doping profiles; etching; gamma-ray detection; impurities; self-diffusion; semiconductor counters; CdTe:Cu; annealing process; chemical self-diffusion; doping; etching process; gamma-ray detectors; impurities; numerical calculation; Annealing; Chemical elements; Crystallization; Etching; Helium; Impurities; Physics; Purification; Semiconductor process modeling; Tellurium; CdTe; chemical diffusion; impurity diffusion; purification;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2022163
Filename :
5204707
Link To Document :
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