DocumentCode
1299878
Title
Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition
Author
Kim, T.G. ; Son, C.S. ; Hwang, S.M. ; Kim, E.K. ; Min, S.K. ; Leem, S.J. ; Park, J.H.
Author_Institution
Semicond. Mater. Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Volume
34
Issue
1
fYear
1998
fDate
1/8/1998 12:00:00 AM
Firstpage
85
Lastpage
87
Abstract
GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 μm long uncoated cavity
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; etching; gallium arsenide; optical fabrication; semiconductor lasers; 250 micron; 43.5 mA; 59.9 mA; 869 nm; GaAs-AlGaAs; GaAs/AlGaAs buried channel stripe laser; MOCVD growth; fabrication; room temperature operation; single-stage metal organic chemical vapour deposition; threshold current; wet etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980084
Filename
654538
Link To Document