Title :
Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition
Author :
Kim, T.G. ; Son, C.S. ; Hwang, S.M. ; Kim, E.K. ; Min, S.K. ; Leem, S.J. ; Park, J.H.
Author_Institution :
Semicond. Mater. Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
1/8/1998 12:00:00 AM
Abstract :
GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 μm long uncoated cavity
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; etching; gallium arsenide; optical fabrication; semiconductor lasers; 250 micron; 43.5 mA; 59.9 mA; 869 nm; GaAs-AlGaAs; GaAs/AlGaAs buried channel stripe laser; MOCVD growth; fabrication; room temperature operation; single-stage metal organic chemical vapour deposition; threshold current; wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980084
