• DocumentCode
    1299889
  • Title

    High-speed InGaAsP/InP selective proton bombarded buried crescent lasers with optical field attenuation regions

  • Author

    Zhang, Baijun ; Yi, Maobin ; Song, Junfeng ; Li, Dehui ; Zhang, Daming ; Gao, Dingsan

  • Author_Institution
    Dept. of Electron. Eng., Jilin Univ., Changchun, China
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/8/1998 12:00:00 AM
  • Firstpage
    88
  • Lastpage
    90
  • Abstract
    A new structure of high-speed InGaAsP/InP selective proton bombarded buried crescent (SPB-BC) laser with optical field attenuation regions is reported. Optical field attenuation regions obstruct the growth and propagation of defects. The lifetime is ~8.5×105 h. The 3 dB bandwidth is in excess of 11.0 GHz, with a low parasitic capacitance (2.5 pF) for the 250 μm long cavity
  • Keywords
    III-V semiconductors; capacitance; gallium arsenide; indium compounds; laser cavity resonators; proton effects; semiconductor lasers; 11.0 GHz; 2.5 pF; 250 micron; 3 dB bandwidth; 8.5E5 hr; III-V semiconductors; InGaAsP-InP; buried crescent lasers; defect propagation; high-speed lasers; laser cavity; optical field attenuation regions; parasitic capacitance; selective proton bombardment;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980041
  • Filename
    654540
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299889