DocumentCode :
1299935
Title :
Comparative Study of 
Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs
Author :
Wei, Chengqing ; Xiong, Yong-Zhong ; Zhou, Xing ; Singh, Navab ; Yuan, Xiao-Jun ; Lo, Guo Qiang ; Chan, Lap ; Kwong, Dim-Lee
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
57
Issue :
10
fYear :
2010
Firstpage :
2774
Lastpage :
2779
Abstract :
The purpose of this brief is to investigate the degradation of 1/f noise levels that is caused by Fowler-Nordheim (FN) tunneling stress for both the silicon nanowire transistor (SNWT) and the FinFET. The oxide traps that are generated under constant-voltage FN stress are extracted from the 1/f noise characteristics. Under the same FN stress voltage and time, the amount of oxide traps that is generated in the cylindrical-channel SNWT is much larger than that generated in the planar-channel FinFET, which is due to the increased electric field at the SiO2/Si interface that is caused by the cylindrical architecture of the SNWT.
Keywords :
1/f noise; electric fields; field effect transistors; nanowires; 1/f noise degradation; FinFET; Fowler-Nordheim tunneling stress; SiO2-Si; electric field; silicon nanowire transistors; FinFETs; Logic gates; Noise; Silicon; Solid modeling; Stress; Tunneling; FinFET; Fowler–Nordheim (FN) tunneling; gate-all-around (GAA); low-frequency noise; silicon nanowire;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2061853
Filename :
5551192
Link To Document :
