TID Sensitivity of NAND Flash Memory Building Blocks

Author

Bagatin, Marta ; Cellere, Giorgio ; Gerardin, Simone ; Paccagnella, Alessandro ; Visconti, Angelo ; Beltrami, Silvia

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy

Volume

56

Issue

4

fYear

2009

Firstpage

1909

Lastpage

1913

Abstract

NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution, we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the characteristic failure mode for each part.

Keywords

random-access storage; NAND flash memory; TID sensitivity; charge pumps; circuital characteristics; failure mode; floating gate array; high capacity nonvolatile memory technology; radiation harsh environments; row-decoder; total ionizing dose; Charge pumps; Circuit testing; Current supplies; Flash memory; Ionizing radiation; Manufacturing; Nonvolatile memory; Space technology; Voltage; X-rays; Flash memories; X-rays; total dose effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2016095

Filename

5204727