Title :
80 Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
Author :
Otsuji, T. ; Murata, K. ; Enoki, T. ; Umeda, Y.
Author_Institution :
NTT Opt. Network Syst. Labs., Kanagawa, Japan
fDate :
1/8/1998 12:00:00 AM
Abstract :
The authors report an 80 Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double-layer interconnection process with a low-permittivity insulator. The record operating data rate was measured on a 3 in wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; digital communication; field effect digital integrated circuits; gallium arsenide; indium compounds; integrated circuit interconnections; multiplexing equipment; optical communication equipment; time division multiplexing; 2:1 selector-type multiplexer; 80 Gbit/s; HEMTs; InAlAs-InGaAs-InP; double-layer interconnection process; high-speed interconnection; low-permittivity insulator; multiplexer IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980001
