Title :
Electrical characterisation of Si-doped GaAs0.5Sb0.5 on InP grown by molecular beam epitaxy
Author :
Sandhu, A. ; Fujii, Teruya ; Nakata, Y. ; Sugiyama, Shunsuke ; Miyauchi, E.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
4/14/1988 12:00:00 AM
Abstract :
Between the growth temperatures of 490-520°C Si-doped GaAs0.5Sb0.5 changes from 1×1017 cm-3 n-type to 2×1017 cm-3 p-type. The scattering mechanisms of the n and p-type epilayers are investigated. The reproducibility and potential applications of the observed conduction type change are demonstrated by the fabrication of a pn diode
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; p-n homojunctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; 490 to 520 C; GaAs0.5Sb0.5:Si-InP; InP; MBE; applications; conduction type change; growth temperature dependence; n-type epilayers; p-type epilayers; pn diode; reproducibility; scattering mechanisms; semiconductor doping; semiconductors;
Journal_Title :
Electronics Letters
