Title :
Low excess noise characteristics in thin avalanche region GaAs diodes
Author :
Li, K.F. ; Ong, D.S. ; David, J.P.R. ; Tozer, R.C. ; Rees, G.J. ; Robson, P.N. ; Grey, R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
1/8/1998 12:00:00 AM
Abstract :
Avalanche noise measurements have been performed on a range of homojunction GaAs p+-i-n+ and n+-i-p + diodes with avalanche widths, w ranging from 1.13 to 0.050 μm. These noise measurements show that, contrary to McIntyre´s avalanche noise theory, there is large reduction in the avalanche noise as w is decreased for both electron and hole initiated impact ionisation
Keywords :
III-V semiconductors; avalanche diodes; gallium arsenide; impact ionisation; semiconductor device noise; 0.05 to 1.13 micron; GaAs; GaAs diodes; avalanche noise measurements; electron initiated impact ionisation; excess noise characteristics; hole initiated impact ionisation; homojunction diodes; n+-i-p+ diodes; p+-i-n+ diodes; thin avalanche region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980021
