Title :
Improved Performance of 1.3-μm Multilayer P-Doped InAs/InGaAs Quantum Dot Lasers Using Rapid Thermal Annealing
Author :
Cao, Q. ; Tong, C.Z. ; Yoon, S.F. ; Liu, C.Y. ; Ngo, C.Y.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
3/1/2012 12:00:00 AM
Abstract :
Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm-1 and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; optical losses; optical multilayers; quantum dot lasers; rapid thermal annealing; InAs-InGaAs; characteristic temperature; defect reduction; electroluminescence; external differential quantum efficiency; internal loss; multilayer p-doped quantum dot lasers; rapid thermal annealing; saturated output power; temperature 600 degC; threshold current; wavelength shift; Annealing; Gallium arsenide; Quantum dot lasers; Radiative recombination; Temperature; Waveguide lasers; Defect; p-doped; quantum dot (QD) laser; thermal annealing;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2068558
