Title :
Scaling Trend of Nanoelectromechanical (NEM) Nonvolatile Memory Cells Based on Finite Element Analysis (FEA)
Author :
Roh, Seung Hyeun ; Kim, Kwangsoo ; Choi, Woo Young
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fDate :
5/1/2011 12:00:00 AM
Abstract :
Finite element analysis (FEA) simulation has been performed to evaluate the scaling of the nanoelectromechanical nonvolatile memory cell. FEA simulation predicted program/erase voltage and also hysteresis voltage more accurate than the analytical modeling in our previous work. It is because FEA simulation reflects the actual memory cell structure and includes nonlinear effects such as beam-stretching effect. Additionally, in the FEA simulation, shear strain has been considered for the accurate evaluation of beam deformation.
Keywords :
finite element analysis; nanoelectromechanical devices; random-access storage; shear deformation; beam deformation; beam-stretching effect; finite element analysis simulation; hysteresis voltage; memory cell structure; nanoelectromechanical nonvolatile memory cells; nonlinear effects; program-erase voltage; shear strain; Analytical models; Electrostatics; Force; Materials; Nonvolatile memory; Strain; Structural beams; Finite element analysis (FEA); nanoelectromechanical (NEM) memory; scaling; shear deformation; stretching effect;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2068056
