Title :
Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source
Author :
Chao, T.S. ; Kuo, C.P. ; Lei, T.F. ; Chen, T.P. ; Huang, T.Y. ; Chang, C.Y.
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
fDate :
1/8/1998 12:00:00 AM
Abstract :
The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+ -implanted samples. This new process is very promising for future surface-channel pMOSFETs
Keywords :
MOS capacitors; MOSFET; boron; diffusion; elemental semiconductors; semiconductor doping; silicon; MOS capacitors; diffusion source; electrical properties; gate material; p+ polysilicon gate; surface-channel pMOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980061
