Title :
Thermally evaporated ITO/GaAs Schottky barrier contacts
Author :
Salehi, A. ; Toosi, K.N.
Author_Institution :
Fac. of Electr. Eng., Univ. of Technol., Tehran, Iraq
fDate :
1/8/1998 12:00:00 AM
Abstract :
ITO/n-GaAs Schottky barrier contacts have been fabricated by thermal evaporation of In2O3/SnO2 on GaAs with various deposition rates rD. The variation in the contact characteristics was systematically investigated with respect to the deposition rate. The optimal deposition rate of 0.2 Å/s yields a barrier height of 0.80 eV and unity ideality factor with a transmittance value of >80% in the visible region of the spectrum
Keywords :
III-V semiconductors; Schottky barriers; contact resistance; gallium arsenide; indium compounds; vapour deposition; 0.80 eV; ITO-GaAs; InSnO-GaAs; Schottky barrier contacts; barrier height; contact characteristics; deposition rate; deposition rates; optimal deposition rate; thermal evaporation; transmittance value; unity ideality factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980024
