• DocumentCode
    1300063
  • Title

    Thermally evaporated ITO/GaAs Schottky barrier contacts

  • Author

    Salehi, A. ; Toosi, K.N.

  • Author_Institution
    Fac. of Electr. Eng., Univ. of Technol., Tehran, Iraq
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/8/1998 12:00:00 AM
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    ITO/n-GaAs Schottky barrier contacts have been fabricated by thermal evaporation of In2O3/SnO2 on GaAs with various deposition rates rD. The variation in the contact characteristics was systematically investigated with respect to the deposition rate. The optimal deposition rate of 0.2 Å/s yields a barrier height of 0.80 eV and unity ideality factor with a transmittance value of >80% in the visible region of the spectrum
  • Keywords
    III-V semiconductors; Schottky barriers; contact resistance; gallium arsenide; indium compounds; vapour deposition; 0.80 eV; ITO-GaAs; InSnO-GaAs; Schottky barrier contacts; barrier height; contact characteristics; deposition rate; deposition rates; optimal deposition rate; thermal evaporation; transmittance value; unity ideality factor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980024
  • Filename
    654571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1300063