DocumentCode
1300124
Title
High-speed 1.5 μm self-aligned constricted mesa lasers grown entirely by MOCVD
Author
Hirayama, Yuzo ; Furuyama, H. ; Morinaga, M. ; Suzuki, Nobuhiro ; Kushibe, M. ; Eguchi, Kiyoshi ; Nakamura, Mitsutoshi
Author_Institution
Toshiba Res. & Dev. Centre, Kawasaki
Volume
24
Issue
8
fYear
1988
fDate
4/14/1988 12:00:00 AM
Firstpage
452
Lastpage
454
Abstract
A self-aligning (SA) process technique to fabricate constricted mesa (CM) lasers is proposed. The controllability of GaInAsP active region volume and InP lateral confining layer widths were greatly improved. Lasers grown entirely by metalorganic chemical vapour deposition (MOCVD) showed very small variation in threshold currents ( I th=15.2±1.1 mA) and in stray junction capacitances (C =1.62±0.08 pF). A record bandwidth of 10 GHz in the 1.5 μm-wavelength region was demonstrated
Keywords
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 1.62 pF; 10 GHz; 15.2 mA; GaInAsP active region; GaInAsP-InP lasers; InP lateral confining layer widths; MOCVD; MOVPE; bandwidth; controllability; metalorganic chemical vapour deposition; self-aligned constricted mesa lasers; semiconductors; stray junction capacitances; threshold currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8227
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