DocumentCode
1300286
Title
Cold-cathode emitter based on a metal-diamond tunneling junction
Author
Lerner, P. ; Cutler, P.H. ; Miskovsky, N.M.
Author_Institution
Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA
Volume
4
Issue
6
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
827
Lastpage
829
Abstract
Recently Geis fabricated a composite cold cathode emitter made of diamond doped by substitutional nitrogen on a roughened metallic substrate, which is characterized by high field emission currents at very low power. Using an internal field emission mechanism through the Schottky barrier at the metal diamond interfaces to populate the conduction band of diamond, we have developed a quantitative theory to describe the operation of such a device. The calculated I-V characteristics are in good agreement with the experimental results of Geis, et al
Keywords
Schottky barriers; cold-cathode tubes; diamond; electron field emission; tunnelling; C; I-V characteristics; Schottky barrier; cold-cathode emitter; conduction band; field emission currents; metal-diamond tunneling junction; quantitative theory; Cathodes; Conductive films; Electron emission; Nitrogen; Physics; Rough surfaces; Schottky barriers; Surface roughness; Surface treatment; Tunneling;
fLanguage
English
Journal_Title
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
1070-9878
Type
jour
DOI
10.1109/94.654720
Filename
654720
Link To Document