Title :
An InGaAs-InP position-sensing photodetector
Author :
Maigne, P. ; Beraldin, J.A. ; Vanderwel, T.M. ; Buchanan, M. ; Landheer, D.
Author_Institution :
Nat. Res. Council, Ottawa, Ont., Canada
fDate :
5/1/1990 12:00:00 AM
Abstract :
The design and fabrication of a position-sensing photodetector that is sensitive to a wavelength of 1.55 μm are reported. This device is based on the photo-lateral effect and uses an In0.53Ga0.47As absorbing layer that is lattice matched to an InP substrate. The output signal (I1- I2)/(I1+I2) varies linearly with respect to the position of the incident beam. The responsivity of 0.75 A/W is uniform over the length of the photodetector. The device is intended for video rate applications and has a -3-dB cutoff frequency of 7 MHz
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-i-n diodes; photodetectors; photodiodes; position measurement; 1.55 micron; 7 MHz; III-V semiconductors; In0.53Ga0.47As absorbing layer; InGaAs-InP position sensing photodetector; InP substrate; cutoff frequency; design; fabrication; incident beam; inverted p-i-n diode; lattice matching; output signal; photo-lateral effect; responsivity; video rate applications; wavelength; Councils; Detectors; Ohmic contacts; Optoelectronic and photonic sensors; P-n junctions; Photodetectors; Physics; Schottky diodes; Semiconductor diodes; Solid lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
