Title :
Design and performance of asymmetric waveguide nitride laser diodes
Author :
Bour, D.P. ; Kneissl, M. ; Van de Walle, C.G. ; Evans, G.A. ; Romano, L.T. ; Northrup, J. ; Teepe, M. ; Wood, R. ; Schmidt, T. ; Schoffberger, S. ; Johnson, N.M.
Author_Institution :
Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
Abstract :
We describe the design and performance characteristics of an asymmetric waveguide nitride laser diode structure, in which the p-cladding layer is placed immediately over the multiple-quantum-well (MQW) active region. Its close proximity to the active region enables it to serve not only as a cladding layer, but also as a potential barrier that confines injected electrons. This structure represents a departure from conventional nitride laser diode structures, where electron confinement is provided by a separate high-aluminum-content AlGaN tunnel barrier layer placed over the MQW active region. The optical confinement factor (/spl Gamma/) remains: comparable to that of the conventional structure, in spite of the QW´s displacement from the center of the waveguide. Room-temperature CW operation was achieved with this structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; optical design techniques; quantum well lasers; ridge waveguides; waveguide lasers; 298 K; AlGaN; AlGaN tunnel barrier layer; InGaN; MQW active region; active region; asymmetric waveguide nitride laser diodes; cladding layer; design; electron confinement; injected electrons; laser diode structure; laser diode structures; multiple-quantum-well active region; optical confinement factor; p-cladding layer; performance; potential barrier; proximity; room-temperature CW operation; Aluminum gallium nitride; Chemical lasers; Diode lasers; Electrons; Optical design; Optical waveguides; Quantum well devices; Quantum well lasers; Stimulated emission; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
