DocumentCode :
1300640
Title :
Theoretical calculation of lasing spectra of quantum-dot lasers: effect of homogeneous broadening of optical gain
Author :
Sakamoto, Akira ; Sugawara, Mitsuru
Author_Institution :
Dept. of Appl. Phys., Tokyo Univ., Japan
Volume :
12
Issue :
2
fYear :
2000
Firstpage :
107
Lastpage :
109
Abstract :
A theoretical calculation is presented for the effect of homogeneous broadening of optical gain on lasing spectra of quantum-dot lasers. Based on a coupled set of rate equations considering both the size distribution of quantum dots and a series of longitudinal cavity modes, we show that dots with different energies start lasing independently due to their spatial localization when the gain spectrum is a delta-like function, and that the dot ensemble contributes to a narrow-line lasing collectively under large homogeneous broadening. The result explains quite excellently the experimental lasing spectra found in self-assembled InGaAs-GaAs quantum-dot lasers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser theory; quantum well lasers; self-assembly; semiconductor quantum dots; spectral line broadening; InGaAs-GaAs; delta-like function; gain spectrum; homogeneous broadening; large homogeneous broadening; lasing spectra; longitudinal cavity modes; narrow-line lasing; optical gain; quantum-dot lasers; rate equations; self-assembled InGaAs-GaAs quantum-dot lasers; size distribution; spatial localization; theoretical calculation; Differential equations; Integral equations; Optical polarization; Optical refraction; Optical scattering; Optical variables control; Photonics; Quantum dot lasers; Stimulated emission; Temperature dependence;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.823485
Filename :
823485
Link To Document :
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