• DocumentCode
    1300640
  • Title

    Theoretical calculation of lasing spectra of quantum-dot lasers: effect of homogeneous broadening of optical gain

  • Author

    Sakamoto, Akira ; Sugawara, Mitsuru

  • Author_Institution
    Dept. of Appl. Phys., Tokyo Univ., Japan
  • Volume
    12
  • Issue
    2
  • fYear
    2000
  • Firstpage
    107
  • Lastpage
    109
  • Abstract
    A theoretical calculation is presented for the effect of homogeneous broadening of optical gain on lasing spectra of quantum-dot lasers. Based on a coupled set of rate equations considering both the size distribution of quantum dots and a series of longitudinal cavity modes, we show that dots with different energies start lasing independently due to their spatial localization when the gain spectrum is a delta-like function, and that the dot ensemble contributes to a narrow-line lasing collectively under large homogeneous broadening. The result explains quite excellently the experimental lasing spectra found in self-assembled InGaAs-GaAs quantum-dot lasers.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser theory; quantum well lasers; self-assembly; semiconductor quantum dots; spectral line broadening; InGaAs-GaAs; delta-like function; gain spectrum; homogeneous broadening; large homogeneous broadening; lasing spectra; longitudinal cavity modes; narrow-line lasing; optical gain; quantum-dot lasers; rate equations; self-assembled InGaAs-GaAs quantum-dot lasers; size distribution; spatial localization; theoretical calculation; Differential equations; Integral equations; Optical polarization; Optical refraction; Optical scattering; Optical variables control; Photonics; Quantum dot lasers; Stimulated emission; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.823485
  • Filename
    823485