Title :
Amorphous-si-based planar grating demultiplexers with total internal reflection grooves
Author :
Song, Jian ; Ding, J.F.
Author_Institution :
Inst. of Optoelectron., Shenzhen Univ., Shenzhen, China
Abstract :
Compact grating demultiplexers with total-internal-reflection (TIR) facets have been fabricated and characterised based on alpha-Si-on-SiO2 wafers. The loss of demultiplexers using TIR facets will be 3-5-dB lower than those using echelle facets. The demultiplexer has much more compact size compared with conventional silica-based devices. The dimension of the device is around half millimetre.
Keywords :
amorphous semiconductors; demultiplexing equipment; diffraction gratings; reflection; silicon compounds; SiO2; amorphous silicon; compact grating demultiplexers; echelle facets; planar grating demultiplexers; total internal reflection grooves;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0789
